Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation
نویسندگان
چکیده
We study the concept of double-heterostructure quantum well (DHQW) InAlN/GaN/AlGaN high electron mobility transistor (HEMT) for higher device robustness and less degradation. Physics-based device simulation proves that the back barrier blocks the carrier injection into the device buffer. However, the energy of the injected electrons in the buffer is higher for any quantum well design in InAlN/GaN than in AlGaN/GaN HEMTs. This energy may be sufficient for releasing hydrogen from GaN point defects.
منابع مشابه
Systematical Study of InAlN/GaN Devices by Numerical Simulation
InAlN/GaN HEMTs have been proposed to provide higher polarization charges without the drawback of high strain [1]. Several groups have demonstrated devices based on InAlN/GaN ([2], [3]), with maximum current capabilities surpassing those of AlGaN/GaN structures. For further optimization a reliable simulation tool is needed. Our two-dimensional device simulator MINIMOS-NT is expanded by material...
متن کاملStudy of the Conduction Properties of the n GaN Cap Layer in GaN/InAlN/GaN E-HEMTs
Carrier transport in normally-off n GaN/InAlN/AlN/GaN high electron mobility transistors is studied using two-dimensional numerical device simulation. We focus on the n GaN cap layer, which is removed under the gate, and its contribution to drain current. Our simulation results show that despite the high doping density and relatively high carrier concentration in this layer, no significant tran...
متن کاملPerformance enhancement of InAlN/GaN HEMTs by KOH surface treatment
Superior electronic and thermal properties have made InAlN/GaN high-electron-mobility transistors (HEMTs) an attractive candidate for power electronics applications. However, their high gate leakage current remains a serious challenge affecting the reliability and performance of these heterostructures. Leakage paths through dislocations or by percolation through inhomogeneities in the InAlN all...
متن کاملTechnology focus: GaN HEMTs
has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...
متن کاملDependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
We investigated the influence of the thickness of the AlN interlayer for InAlN/GaN and InAlN/AlGaN/GaN heterostructures. The AlN thickness strongly affects the surface morphology and electron mobility of the InAlN/GaN structures. The rms roughness of the surface increases from 0.35 to 1.2 nm with increasing AlN thickness from 0 to 1.5 nm. Large pits are generated when the AlN is thicker than 1 ...
متن کامل